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| SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch High Speed Switching Applications * * * Small Package Low on Resistance : Ron = 70 m (max) (@VGS = -4 V) : Ron = 95 m (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) Tch Tstg Rating -12 8 -3.0 -6.0 1.25 150 -55~150 A Unit V V Drain power dissipation Channel temperature Storage temperature range W C C JEDEC JEITA TOSHIBA 2-3S1A Note 1: Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm , t = 10 s) Note 2: The pulse width limited by max channel temperature. 2 Weight: 10 mg (typ.) Marking 3 Equivalent Circuit 3 KDH 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account 1 2002-03-27 SSM3J13T Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth |Yfs| Test Condition VGS = 8 V, VDS = 0 ID = -1 mA, VGS = 0 ID = -1 mA, VGS = 8 V VDS = -12 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -1.5 A ID = -1.5 A, VGS = -4 V Drain-Source ON resistance RDS (ON) ID = -1.5 A, VGS = -2.5 V ID = -1.5 A, VGS = -2.0 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff (Note 3) (Note 3) (Note 3) (Note 3) Min 3/4 -12 -4 3/4 -0.45 3.8 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 Max 1 3/4 3/4 -1 -1.1 3/4 70 95 180 3/4 3/4 3/4 3/4 3/4 pF pF pF ns mW Unit mA V V mA V S 3/4 50 70 90 890 203 288 48 120 VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDD = -10 V, ID = -1 A VGS = 0~-2.5 V, RG = 4.7 W Note 3: Pulse test Switching Time Test Circuit (a) Test circuit 0 -2.5 V 10 ms VDD OUT VDD = -10 V RG = 4.7 W D.U. < 1% = VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25C (b) VIN 0V 10% 90% IN RG -2.5 V VDS (ON) 90% 10% tr ton (c) VOUT VDD tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. VGS recommended voltage of -2.5 V or higher to turn on this product. 2 2002-03-27 SSM3J13T ID - VDS -4 -4 V -2.5 V -3 -2.0 V -1.8 V -1.6 V -10000 Common Source Ta = 25C -1000 Common Source VDS = -3 V ID - VGS (mA) (A) 75C -100 Ta = 25C ID ID -1.5 V -2 -1.4 V -1 VGS = -1.2 V 0 0 Drain current Drain current -10 -25C -1 -0.1 -0.5 -1 -1.5 -2 -0.01 0 -0.5 -1 -1.5 -2 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) -ID 250 Common Source Ta = 25C 200 400 500 RDS (ON) - VGS Common Source ID = -1.5 A Ta = 25C Drain-Source on resistance RDS (ON) (mW) 150 VGS = -2 V -2.5 V 50 -4 V Drain-Source on resistance RDS (ON) (mW) -6 300 100 200 100 0 0 -2 -4 0 0 -2 -4 -6 -8 Drain current ID (A) Gate-Source voltage VGS (V) RDS (ON) - Ta 160 Common 140 Source 120 100 80 60 40 20 0 -25 0.1 -0.01 -2.5 V -4 V ID = -1.5 A VGS = -2 V 100 |Yfs| - ID Common Source VDS = -3 V Ta = 25C 10 Forward transfer admittance |Yfs| (S) Drain-Source on resistance RDS (ON) (mW) 1 0 25 50 75 100 125 150 -0.1 -1 -10 Ambient temperature Ta (C) Drain current ID (A) 3 2002-03-27 SSM3J13T Vth - Ta -1 Common Source -0.8 VDS = -3 V ID = -0.1 mA 1400 C - VDS Common Source 1200 VGS = 0 f = 1 MHz Ta = 25C Ciss 800 600 400 Coss 200 Crss (V) Gate threshold voltage Vth (pF) -0.4 -0.2 1000 Capacitance C -0.6 0 -25 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 14 Ambient temperature Ta (C) Drain-Source voltage VDS (V) t - ID 1000 Common Source 500 300 VDD = -10 V VGS = 0~ -2.5 V Ta = 25C RG = 4.7 W toff 100 50 30 ton tr 10 -0.01 0 0 tf -3 Common Source VGS = 0 Ta = 25C -2 IDR - VDS (A) D Drain reverse current IDR (ns) G S Switching time t -1 -0.1 -1 -10 0.4 0.8 1.2 Drain current ID (A) Drain-Source voltage VDS (V) PD - Ta 1.5 t = 10 s Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, 2 Cu Pad: 645 mm (W) PD Drain power dissipation 1.25 1 0.75 DC 0.5 0.25 0 0 25 50 75 100 125 150 Ambient temperature Ta (C) 4 2002-03-27 SSM3J13T Safe operating area -10 ID max (pulsed) ID max (continuous) 10 ms* ID (A) -1 10 s* Drain current DC operation -0.1 Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, 2 Cu Pad: 645 mm ) *: Single nonrepetitive Pulse Ta = 25C Curves must be derated linearly with increase in temperature. -1 VDSS max -10 -100 -0.01 -0.1 Drain-Source voltage VDS (V) rth - tw 1000 Single pulse (C /W) Transient thermal impedance rth 100 Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, 2 Cu Pad: 645 mm ) 10 1 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) 5 2002-03-27 SSM3J13T RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-03-27 |
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